The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide.
A Cornell collaboration has found a way to grow a single crystalline layer of alpha-aluminum gallium oxide that has the widest energy bandgap to date – a discovery that clears the way for new semiconductors that will handle higher voltages, higher power densities and higher frequencies than previously seen.
The collaboration was led by co-senior authors Debdeep Jena and Huili Grace Xing, both professors in electrical and computer engineering and in materials science and engineering. The team also included David Muller, the Samuel B. Eckert Professor in Applied and Engineering Physics, who specializes in electron microscopy, and Darrell Schlom, the Herbert Fisk Johnson Professor of Industrial Chemistry, who grows oxide materials for electronic uses.
A group of researchers led by Cornell is unlocking the full potential of aluminum nitride – an important material for the advancement of electronics and photonics – thanks to the development of a... Read more about Cleaning technique boosts electronic, photonic prospects of aluminum nitride
Cornell engineers have created a deep-ultraviolet laser using semiconductor materials that show great promise for improving the use of ultraviolet light for sterilizing medical tools, purifying water... Read more about Engineers pave way for next-gen deep ultraviolet lasers
Ten assistant professors representing four colleges have recently received National Science Foundation Faculty Early Career Development Awards to support their research objectives. Read more about Ten assistant professors win NSF early-career awards
