Darrell Schlom is the Herbert Fisk Johnson Professor of Industrial Chemistry in the Department of Materials Science and Engineering at Cornell University. After receiving a B.S. degree from Caltech, he did graduate work at Stanford University receiving an M.S. in Electrical Engineering and a Ph.D. in Materials Science and Engineering. He was then a post-doc at IBM's research lab in Zurich, Switzerland in the oxide superconductors and novel materials group managed by Nobel Prize winners J. Georg Bednorz and K. Alex Müller. In 1992 he joined the faculty at Penn State in the Department of Materials Science and Engineering, where he spent 16 years before joining the faculty at Cornell in 2008. His research interests involve the replacement of SiO2 as the gate dielectric in MOSFETs and the heteroepitaxial growth and characterization of oxide thin films, especially those with functional properties (ferroelectric, piezoelectric, ferromagnetic, or a combination of these properties), including their epitaxial integration with semiconductors. His group synthesizes these oxide heterostructures using molecular-beam epitaxy (MBE). He has published over 400 papers and 8 patents resulting in an h-index of 58 and over 14,000 citations. He has received various awards including young investigator awards from ONR and NSF, an Alexander von Humboldt Research Fellowship, and the MRS Medal. He is a Fellow of both the American Physical Society and the Materials Research Society.
The focus of my group's research is investigating and perfecting the properties of oxide materials for electronic uses. To do this, we grow oxide thin films on single crystal substrates of closely related substances. The single crystal substrate provides a structural template for the thin films that we grow. The films follow this atomic template and are thus said to be epitaxial (inheriting their crystalline arrangement from the underlying substrate). Our focus on oxides is due to the tremendous promise that these materials hold for electrical applications. Oxides exhibit an unparalleled variety of electronic properties. Insulating, semiconducting, and even superconducting oxides all exist within the set of structurally compatible oxides known as perovskites. This structurally related family also includes oxides that are magnetic, ferroelectric, or even both at the same time. In short, this family of oxides contains the full spectrum of electronic properties. A major challenge, however, is to prepare these materials with sufficient quality and integrate them with adequate control so that these properties can be fully utilized in electronic devices. This is our research goal.
Schlom teaches courses on the properties of electronic materials and the synthesis of thin films. During his time at Cornell he has taught the following courses: MSE 3050/5850 -- Electronic, Magnetic, and Dielectric Properties of Materials MSE 3070 -- Materials Design Concepts I MSE 5430 -- Thin-Film Materials Science MSE 6050 -- Electronic Properties of Materials
This year Schlom is on the following Cornell committees: College Strategic Planning Committee on Advanced Materials (vice-Chair) MSE Faculty Search (Chair) MSE Curriculum Committee MSE Awards Committee
- 2010. "A Strong Ferroelectric Ferromagnet Created by means of Spin-Lattice Coupling." Nature 466: 954-958. .
- 2010. "Oxide Interfaces--An Opportunity for Electronics." Science 327: 1607-1611. .
- 2009. "A Strain-Driven Morphotropic Phase Boundary in BiFeO3." Science 326: 977-980. .
- 2009. "A Ferroelectric Oxide Made Directly on Silicon." Science 324: 367-370. .
- 2008. "Gate Oxides Beyond SiO2." MRS Bulletin 33: 1017-1025. .
Selected Awards and Honors
- Herbert Fisk Johnson Professor of Industrial Chemistry (Cornell University) 2010
- Materials Research Society Fellow 2010
- MRS Medal (Materials Research Society) 2008
- Fellow (American Physical Society) 2003
- Faculty Scholar Medal in Engineering (Penn State) 2006
- BS (Engineering and Applied Science), California Institute of Technology, 1984
- MS (Electrical Engineering), Stanford University, 1989
- Ph D (Materials Engineering), Stanford University, 1990